Silicon-on-Insulator (SOI) wafers are critical in a wide range of applications due to their ability to isolate active devices from the bulk substrate, improving performance and reducing parasitic effects. Below are the major applications and their typical specifications:
Microelectronics and CMOS Technology
Applications: High-performance microprocessors, low-power digital circuits, RF circuits for wireless communication.
Specifications:
- Handle Layer: P-type or N-type silicon, resistivity: 1-20 Ω·cm.
- Buried Oxide (BOX) Layer: Thickness: 50-200 nm.
- Top Silicon Layer: Thickness: 10-200 nm, resistivity: 1-100 Ω·cm.
MEMS Devices
Applications: Accelerometers, gyroscopes, pressure sensors, optical MEMS devices.
Specifications:
- Handle Layer: Bulk silicon, orientation <100>, resistivity > 0.1 Ω·cm.
- BOX Layer: Thickness: 1-2 μm for insulation.
- Top Silicon Layer: Thickness: 1-50 μm, orientation <100> or <110>.
Photonics
Applications: Optical waveguides, modulators, integrated photonic circuits.
Specifications:
- Handle Layer: Orientation <100>, high resistivity (> 500 Ω·cm).
- BOX Layer: Thickness: 1-3 μm.
- Top Silicon Layer: Ultra-thin layer (20-50 nm).
Other Applications
SOI wafers are also used in power electronics, biosensors, radiation-hardened electronics, RF applications, quantum computing, and advanced research. Each application demands specific wafer specifications to meet performance and functionality requirements.